YAGEO XSemi XP10N3R8IT MOSFETs N-CH 100V 67.7A TO-220CFM-T

Width: 10.00 mm

Height: 4.50 mm

Length: 28.0 mm

Fall Time: 106 ns

Rise Time: 88 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 82 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.92 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 67.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 90 S

Rds On - Drain-Source Resistance: 3.88 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V