ZEISS Crossbeam 550 전자현미경

SEM Schottky Emitter:

1.4 nm @ 1 kV  

1.2 nm @ 1 kV with Tandem decel 

1.6 nm @ 200 V with Tandem decel 

0.7 nm @ 15 kV 

0.6 nm @ 30 kV (STEM mode) 

1.8 nm @ 1 kV (WD 5 mm)  

1.3 nm @ 1 kV with Tandem decel (WD 5 mm) 

0.9 nm @ 15kV (WD 5 mm) 

2.3 nm @20 kV & 10 nA (WD 5 mm)  

Beam current: 10 pA – 100 nA

Store Resolution: 32 k × 24 k (up to 50 k × 40 k with optional Atlas 5 3D Tomography module)

Detection Limit: < 4,2 ppm boron in silicon

Lateral Resolution: < 35 nm

Mass/Charge Range: 1-500 Th

Mass Resolution: m/Δm > 500 FWTM

Depth Resolution: < 20nm AlAs/GaAs multilayer system

Datasheet

Video