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MOSFETs Complex Trans BIP PNP + MOS Pch ROHM Semiconductor QS8F2TCR

Fall Time: 85 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 10 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V

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