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MOSFETs TO220 600V 7A N-CH MOSFET Vishay Siliconix SIHP7N60E-BE3

Fall Time: 14 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 40 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 78 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 600 mOhms

Vds - Drain-Source Breakdown Voltage: 609 V

Vgs th - Gate-Source Threshold Voltage: 4 V

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