Advanced Linear Devices ALD1102BSAL MOSFET 双N沟道场效应管 10.6 500mW 0.7V 10欧姆

Technology: Si

Unit Weight: 74 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Id - Continuous Drain Current: 16 mA

Rds On - Drain-Source Resistance: 270 Ohms

Vds - Drain-Source Breakdown Voltage: 10.6 V