Advanced Linear Devices ALD910016SALI MOSFET 双路 SAB MOSFET 阵列 VT=1.60V

Technology: Si

Unit Weight: 74 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 80 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 1.6 MOhms

Vds - Drain-Source Breakdown Voltage: 10.6 V

Vgs th - Gate-Source Threshold Voltage: 1.62 V