Advanced Semiconductor, Inc. AGR09030EF 射频功率MOSFET射频晶体管

Technology: Si

Configuration: Single

Operating Frequency: 895 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 80 W

Vgs - Gate-Source Voltage: 15 V

Id - Continuous Drain Current: 4.25 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 5 V