Advanced Semiconductor, Inc. BLV31 射频双极功率射频晶体管

Technology: Si

Mounting Style: Through Hole

Transistor Type: Bipolar Power

Operating Frequency: 224 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 7 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 30 V