Advanced Semiconductor, Inc. MRF1000MB 射频双极功率射频晶体管

Technology: Si

Mounting Style: SMD/SMT

Transistor Type: Bipolar Power

Operating Frequency: 1.09 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 7 W

Emitter- Base Voltage VEBO: 3.5 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 20 V