Advanced Semiconductor, Inc. MRF313 射频双极小信号射频晶体管

Technology: Si

Unit Weight: 16.222 g

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 400 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 6.1 W

Emitter- Base Voltage VEBO: 3 V

Continuous Collector Current: 150 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 30 V