Advanced Semiconductor, Inc. MRF315A 射频双极功率射频晶体管

Technology: Si

Mounting Style: Through Hole

Transistor Type: Bipolar Power

Operating Frequency: 200 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 5

Collector- Emitter Voltage VCEO Max: 35 V