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Technology: Si
Mounting Style: Through Hole
Transistor Type: Bipolar Power
Operating Frequency: 500 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 55 W
Emitter- Base Voltage VEBO: 4 V
Continuous Collector Current: 2.2 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 33 V
