Advanced Semiconductor, Inc. MRF557 射频双极功率射频晶体管

Technology: Si

Unit Weight: 4.885 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Power

Operating Frequency: 800 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 3 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 400 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 90

Collector- Emitter Voltage VCEO Max: 16 V