Advanced Semiconductor, Inc. MRF581 射频双极型晶体管 NPN 硅射频晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Bipolar

Operating Frequency: 1 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 2.5 W

Emitter- Base Voltage VEBO: 2.5 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 18 V