Advanced Semiconductor, Inc. MRF581A 射频双极小信号射频晶体管

Technology: Si

Unit Weight: 100 mg

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 1 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

Emitter- Base Voltage VEBO: 2.5 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 90

Collector- Emitter Voltage VCEO Max: 15 V