Advanced Semiconductor, Inc. MRF587 射频双极功率射频晶体管

Technology: Si

Unit Weight: 12.171 g

Mounting Style: Through Hole

Transistor Type: Bipolar Power

Operating Frequency: 500 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 5 W

Emitter- Base Voltage VEBO: 2.5 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 17 V