Advanced Semiconductor, Inc. MRF5943 射频双极功率射频晶体管

Technology: Si

Unit Weight: 506.600 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Power

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Gain Bandwidth Product fT: 1.3 GHz

Emitter- Base Voltage VEBO: 3.5 V

Continuous Collector Current: 400 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 30 V