Advanced Semiconductor, Inc. MRF652S 射频双极功率射频晶体管

Technology: Si

Mounting Style: SMD/SMT

Transistor Type: Bipolar Power

Operating Frequency: 512 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 25 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 2 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 16 V