Advanced Semiconductor, Inc. MRF951 射频双极小信号射频晶体管

Technology: Si

Unit Weight: 1.012 g

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 2 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Emitter- Base Voltage VEBO: 1.5 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 10 V