Advanced Semiconductor, Inc. MS1000 射频双极功率射频晶体管

Technology: Si

Unit Weight: 23.025 g

Configuration: Single

Mounting Style: Screw Mount

Transistor Type: Bipolar Power

Operating Frequency: 30 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 270 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 36 V