Advanced Semiconductor, Inc. MS1008 射频双极功率射频晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Bipolar Power

Operating Frequency: 30 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 233 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 55 V