Advanced Semiconductor, Inc. SD1407F 射频双极型晶体管 NPN 硅射频功率晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Bipolar

Operating Frequency: 30 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 270 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 20 A

Maximum DC Collector Current: 20 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 35 V