Advanced Semiconductor, Inc. TP9383 射频双极功率射频晶体管

Technology: Si

Unit Weight: 54.770 g

Mounting Style: Screw Mount

Transistor Type: Bipolar Power

Operating Frequency: 108 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 230 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 16 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 25 V