Alliance Memory AS4C16M16MSA-6BIN 移动DRAM芯片 LP SDRAM 256M位 16M x 16 1.8V 54针FBGA
ModelAS4C16M16MSA-6BIN
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Type: Mobile LP SDRAM
Density: 256 MB
Package: 54FBGA
Mounting: Surface Mount
DRAM Type: Mobile LP SDRAM
Pin Count: 54
Lead Finish: Tin-Silver-Copper
No. of Pins: 54
Organization: 16M x 16
Sub-Category: Mobile LP SDRAM
Data Bus Width: 16 Bit
Memory Density: 256 Mbit
Number of Banks: 4
Screening Level: Industrial
Supplier Package: FBGA
Address Bus Width: 13 Bit
Maximum Clock Rate: 166 MHz
Product Dimensions: 8 x 8 x 0.7(Max) mm
Supply Voltage Nom: 1.8 V
Clock Frequency Max: 166 MHz
Number of I/O Lines: 16 Bit
Operating Temperature: -40 to 85 °C
Number of Bits per Word: 16 Bit
Operating Supply Voltage: 1.8, 2.5, 3.3 V
Maximum Operating Current: 80 mA
Operating Temperature Max: 85 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 5.5/6/22 ns
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