Alliance Memory AS6C2016-55BIN SRAM芯片 异步 单电压3V 2M位 128K x 16 55纳秒 48引脚 TFBGA

Density: 2 Mbit

Package: 48TFBGA

Mounting: Surface Mount

Rad Hard: No

Pin Count: 48

No. of Pins: 48

Timing Type: Asynchronous

Memory Density: 2 Mbit

Number of Ports: 1

Number of Words: 128 kWords

Screening Level: Industrial

Supplier Package: TFBGA

Address Bus Width: 17 Bit

Product Dimensions: 8 x 6 x 1.05 mm

Supply Voltage Max: 5.5 V

Supply Voltage Min: 2.7 V

Supply Voltage Nom: 3 V

Number of I/O Lines: 16 Bit

Operating Temperature: -40 to 85 °C

Number of Bits per Word: 16 Bit

Maximum Operating Current: 60 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 55 ns

Typical Operating Supply Voltage: 3.0000 V

Datasheet