Analog Devices MAX2602ESA+ 射频双极功率3.6V，1W射频功率晶体管，适用于900MHz

Width: 3.99 mm

Height: 1.58 mm

Length: 4.98 mm

Technology: Si

Unit Weight: 540 mg

Output Power: 1 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Power

Operating Frequency: 900 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 6.4 W

DC Current Gain hFE Max: 100 at 250 mA at 3 V

Gain Bandwidth Product fT: 1000 MHz

Emitter- Base Voltage VEBO: 2.3 V

Operating Temperature Range: - 40 C to + 85 C

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 1.2 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 17 V