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Winbond W25Q01JVZEIQ NOR闪存 spiFlash，1G位，4Kb均匀扇区

Winbond W25Q01JVZEIQ NOR闪存 spiFlash，1G位，4Kb均匀扇区

Infineon S26KS512SDABHN030 NOR闪存 NOR

Infineon S26KS512SDABHN030 NOR闪存 NOR

GSI Technology GS8320Z18AGT-200 NBT 管道/流通 2.5 或 3.3V 2M x 18 36M

GSI Technology GS8320Z18AGT-200 NBT 管道/流通 2.5 或 3.3V 2M x 18 36M

onsemi NV93C86BMUW3VTBG EEPROM 串行 16-Kb Microwire - 汽车级，可润湿侧面 UDFN 封装可润湿侧面 UDFN8 汽车级 16 Kb Microwire

onsemi NV93C86BMUW3VTBG EEPROM 串行 16-Kb Microwire - 汽车级，可润湿侧面 UDFN 封装可润湿侧面 UDFN8 汽车级 16 Kb Microwire

Renesas Electronics 71V67603S133BGG 同步9M 3.3V PB 慢速P/L

Renesas Electronics 71V67603S133BGG 同步9M 3.3V PB 慢速P/L

ISSI IS43R16320F-6TL SDRAM - DDR 512M 32Mx16 166MHz DDR 2.5V

ISSI IS43R16320F-6TL SDRAM - DDR 512M 32Mx16 166MHz DDR 2.5V

SanDisk SDINDDH6-32G-XI 嵌入式闪存驱动器 WD/SD

SanDisk SDINDDH6-32G-XI 嵌入式闪存驱动器 WD/SD

GSI Technology GS82582TT37GE-400 SigmaDDR-II+ B2 1.5/1.8V 8M x 36 288M

GSI Technology GS82582TT37GE-400 SigmaDDR-II+ B2 1.5/1.8V 8M x 36 288M

Micron MT60B2G8HB-48B:A TR DRAM DDR5 16G 2GX8 FBGA

Micron MT60B2G8HB-48B:A TR DRAM DDR5 16G 2GX8 FBGA

Microchip Technology 24FC04-E/ST EEPROM 4Kb I2C，1MHz 1.7-5.5V，8-TSSOP

Microchip Technology 24FC04-E/ST EEPROM 4Kb I2C，1MHz 1.7-5.5V，8-TSSOP

Renesas Electronics 72V261LA10PFG FIFO IDT

Renesas Electronics 72V261LA10PFG FIFO IDT

Alliance Memory AS6C2008A-55TINTR 异步2M，3.3V，55ns 256K x 8 异步

Alliance Memory AS6C2008A-55TINTR 异步2M，3.3V，55ns 256K x 8 异步

Microchip Technology SST39VF3202-70-4C-B3KE 引导块 2M X 16 70ns

Microchip Technology SST39VF3202-70-4C-B3KE 引导块 2M X 16 70ns

GSI Technology GS81302DT07GE-450I SigmaQuad-II+ B4

GSI Technology GS81302DT07GE-450I SigmaQuad-II+ B4

GSI Technology GS8342DT06BD-450I SigmaQuad-II+ 1.8 或 1.5V 4M x 8 36M

GSI Technology GS8342DT06BD-450I SigmaQuad-II+ 1.8 或 1.5V 4M x 8 36M

Micron MT62F1536M32D4DS-026 WT:B TR DRAM LPDDR5 48G 1.5GX32 FBGA

Micron MT62F1536M32D4DS-026 WT:B TR DRAM LPDDR5 48G 1.5GX32 FBGA

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