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存储器IC | EMIN.VN

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GSI Technology GS81313LQ36GK-714I SigmaQuad-IIIe B2 1.2/1.25V 4M x 36 144M

GSI Technology GS81313LQ36GK-714I SigmaQuad-IIIe B2 1.2/1.25V 4M x 36 144M

GSI Technology GS81302T08E-350 SigmaDDR-II B2

GSI Technology GS81302T08E-350 SigmaDDR-II B2

Infineon S29GL512S10DHSS50 NOR闪存 PNOR

Infineon S29GL512S10DHSS50 NOR闪存 PNOR

ISSI IS62WV5128EALL-55TLI-TR SRAM 4Mb，低功耗/节能，异步，512K x 8，55ns，1.65v-2.2v，32针 TSOP（8x20 毫米），RoHS

ISSI IS62WV5128EALL-55TLI-TR SRAM 4Mb，低功耗/节能，异步，512K x 8，55ns，1.65v-2.2v，32针 TSOP（8x20 毫米），RoHS

GSI Technology GS8662DT11BGD-400I SigmaQuad-II+ 1.8 或 1.5V 8M x 9 72M

GSI Technology GS8662DT11BGD-400I SigmaQuad-II+ 1.8 或 1.5V 8M x 9 72M

GSI Technology GS81302T08E-375 SigmaDDR-II B2

GSI Technology GS81302T08E-375 SigmaDDR-II B2

GSI Technology GS8662DT20BGD-400I SigmaQuad-II+ 1.8 或 1.5V 4M x 18 72M

GSI Technology GS8662DT20BGD-400I SigmaQuad-II+ 1.8 或 1.5V 4M x 18 72M

GSI Technology GS81302TT20GE-400 SigmaDDR-II+

GSI Technology GS81302TT20GE-400 SigmaDDR-II+

Infineon S29GL01GT12DHVV20 NOR闪存 NOR

Infineon S29GL01GT12DHVV20 NOR闪存 NOR

Avalanche Technology AS1008204-0108X0IWAR MRAM

Avalanche Technology AS1008204-0108X0IWAR MRAM

GSI Technology GS8321Z36AD-375 NBT 2.5 或 3.3V 1M x 36 32M

GSI Technology GS8321Z36AD-375 NBT 2.5 或 3.3V 1M x 36 32M

GSI Technology GS8642Z18B-300I NBT 管道/流通 2.5 或 3.3V 4M x 18 72M

GSI Technology GS8642Z18B-300I NBT 管道/流通 2.5 或 3.3V 4M x 18 72M

SkyHigh Memory S34ML08G101TFA003 NAND闪存SLC，8Gb，4x，3V，x8，1bit，TS248

SkyHigh Memory S34ML08G101TFA003 NAND闪存SLC，8Gb，4x，3V，x8，1bit，TS248

Infineon S25FL256SAGNFI010 NOR闪存 256Mb, 3V, 133MHz SPI

Infineon S25FL256SAGNFI010 NOR闪存 256Mb, 3V, 133MHz SPI

Microchip Technology 24LC08B/ST EEPROM 1kx8 - 2.5V

Microchip Technology 24LC08B/ST EEPROM 1kx8 - 2.5V

Infineon CY62157EV30LL-45ZXI 异步8Mb 3V 45ns 512K x 16 LP

Infineon CY62157EV30LL-45ZXI 异步8Mb 3V 45ns 512K x 16 LP

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