CEL CE3512K2 射频JFET晶体管 12GHz NF 0.3dB Ga 13.7dB -55°C +125°C

Gain: 13.7 dB

Technology: GaAs

Unit Weight: 16.473 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: pHEMT

NF - Noise Figure: 0.3 dB

Operating Frequency: 12 GHz

Pd - Power Dissipation: 125 mW

Gate-Source Cutoff Voltage: - 750 mV

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 54 mS

Vgs - Gate-Source Breakdown Voltage: - 3 V

Vds - Drain-Source Breakdown Voltage: 4 V