CEL CE3514M4-C2 射频结型场效应晶体管 12GHz 噪声系数 0.42dB 增益 12.2dB 工作温度 -55°C 至 +125°C

Gain: 12.2 dB

Technology: GaAs

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: pHEMT

NF - Noise Figure: 0.42 dB

Operating Frequency: 12 GHz

Pd - Power Dissipation: 125 mW

Gate-Source Cutoff Voltage: - 750 mV

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 54 mS

Vgs - Gate-Source Breakdown Voltage: - 3 V

Vds - Drain-Source Breakdown Voltage: 4 V