CEL CE3521M4 射频JFET晶体管 20GHz 噪声系数0.70dB 增益11.9dB 工作温度-55°C至+125°C

Gain: 11.9 dB

Technology: GaAs

Unit Weight: 4.528 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: pHEMT

NF - Noise Figure: 0.7 dB

Operating Frequency: 20 GHz

Pd - Power Dissipation: 125 mW

Gate-Source Cutoff Voltage: - 750 mV

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 47 mS

Vgs - Gate-Source Breakdown Voltage: - 3 V

Vds - Drain-Source Breakdown Voltage: 3 V