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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Transistor Polarity: NPN
Pd - Power Dissipation: 110 mW
DC Current Gain hFE Max: 160
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 100 mA
DC Collector/Base Gain hfe Min: 80
