Central Semiconductor 2N2369A TIN/LEAD 双极型晶体管 BJTs 40Vcbo 40Vces 15V 4.5Vebo 200mA 500mA

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 120 at 10 mA, 1 V

Gain Bandwidth Product fT: 500 MHz

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 10 mA, 1 V

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 200 mV