Central Semiconductor 2N4058 TIN/LEAD 双极型晶体管 BJTs 30Vcbo PNP 低噪声 30Vceo 625mW 200mA

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 400

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 700 mV