Central Semiconductor 2N4093 TIN/LEAD JFETs N型 40Vgd 40Vgs 40Vds 10mA 1.8W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Gate-Source Cutoff Voltage: 5 V

Maximum Drain Gate Voltage: 40 V

Drain-Source Current at Vgs=0: 8 mA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 80 Ohms

Vgs - Gate-Source Breakdown Voltage: 40 V