Central Semiconductor 2N4416A TIN/LEAD JFETs N型 35Vgd 35Vgs 35Vds 10mA 300mW

Technology: Si

Unit Weight: 431.107 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: 6 V

Drain-Source Current at Vgs=0: 15 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Vgs - Gate-Source Breakdown Voltage: 35 V

Vds - Drain-Source Breakdown Voltage: 35 V