Central Semiconductor 2N4856 PBFREE JFETs N型 40Vds 40Vdg 40Vgsr 50mA 360mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: 10 V

Maximum Drain Gate Voltage: 40 V

Drain-Source Current at Vgs=0: 50 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 25 Ohms

Vgs - Gate-Source Breakdown Voltage: 40 V