Central Semiconductor 2N5308 PBFREE 达林顿晶体管 NPN 达林放大器

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 70000 at 2 mA, 5 V

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 7000 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 40 V