Central Semiconductor 2N5308 TRA TIN/LEAD 达林顿晶体管 NPN 40Vcbo 40Vceo 12Vebo 300mA 625mW

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 300 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 7000 at 5 V, 2 mA

Collector- Emitter Voltage VCEO Max: 40 V