Central Semiconductor 2N5427 PBFREE 双极型晶体管 NPN 80Vcbo 80Vceo 7.0A 40W 0.7Vce

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 120 at 2 A

Gain Bandwidth Product fT: 30 MHz

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 7 A

DC Collector/Base Gain hfe Min: 30 at 2 A

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 700 mV