Central Semiconductor 2N5486 TIN/LEAD JFETs N型 25Vdg 25Vgs 30mA 10mA 310mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 310 mW

Gate-Source Cutoff Voltage: 6 V

Maximum Drain Gate Voltage: 25 V

Drain-Source Current at Vgs=0: 20 mA

Id - Continuous Drain Current: 30 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Vgs - Gate-Source Breakdown Voltage: 25 V