Central Semiconductor 2N6039 TIN/LEAD 达林顿晶体管 NPN 80Vcbo 80Vceo 5.0Vebo 4.0A 40W

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 15000 at 2 A, 3 V

Gain Bandwidth Product fT: 25 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 500 at 500 mA, 3 V

Collector- Emitter Voltage VCEO Max: 80 V