Central Semiconductor 2N6295 TIN/LEAD 达林顿晶体管 80Vcbo 80Vceo 5.0Vebo 4.0A 50W

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 50 W

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 750 at 2 A, 3 V

Maximum Collector Cut-off Current: 500 uA

Collector- Emitter Voltage VCEO Max: 80 V