Central Semiconductor 2N6296 PBFREE 达林顿晶体管 60Vcbo 60Vceo 5.0Vebo 4.0A 50W

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 50 W

Gain Bandwidth Product fT: 4 GHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 4 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 1.5 A, 3 V

Collector- Emitter Voltage VCEO Max: 60 V