Central Semiconductor BC307B TIN/LEAD 双极型晶体管 PNP 50Vces 45Vceo 5.0Vebo 5.0V 500mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 460 at 5 V, 2 mA

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 180 at 5 V, 2 mA

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 300 mV