Central Semiconductor BC857C TR PBFREE 双极型晶体管 PNP 50Vcbo 45Vceo 5.0Vebo 100mA 350mW

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 800 at 2 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 420 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 650 mV