Central Semiconductor CCSPG1060N TR PBFREE 氮化镓场效应晶体管 100V，60A，N沟道芯片级氮化镓场效应晶体管

Technology: GaN

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 9.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.1 W

Vgs - Gate-Source Voltage: - 4 V, + 6 V

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 5.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V