Central Semiconductor CCSPG1510N TR PBFREE 功率场效应管 150V，1000A，N沟道芯片，氮化镓场效应管，CSP4X6封装，7英寸

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 mW

Vgs - Gate-Source Voltage: - 4 V, + 6 V

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 3.9 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V