Central Semiconductor CDF56G6517N TR13 PBFREE 氮化镓场效应管 650V，17A，N沟道氮化镓场效应管

Fall Time: 4 ns

Rise Time: 5 ns

Technology: GaN

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 3.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 113 W

Vgs - Gate-Source Voltage: - 1.4 V, + 7 V

Typical Turn-On Delay Time: 3 ns

Maximum Operating Frequency: 100 KhZ

Minimum Operating Frequency: 0 Hz

Typical Turn-Off Delay Time: 4 ns

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 140 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V