Central Semiconductor CDFG6558N TR13 PBFREE 功率场效应管 650V，29A，N沟道芯片，氮化镓场效应管，DFN5X6A 封装，13英寸

Fall Time: 4 ns

Rise Time: 4 ns

Technology: GaN

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 6 V, + 7 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 5 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V